PART |
Description |
Maker |
2SB1182 2SB1188 2SB822 2SB911M 2SB1240 A5800350 2S |
From old datasheet system Medium power Transistor(-32V/ -2A) Medium power Transistor(-32V, -2A) 中等功率晶体管(- 32V的,- 2A型)
|
Rohm Co., Ltd.
|
2SB1240 2SB1182 |
Medium power transistor (-32V, -2A)
|
Rohm
|
MP6Z2 |
Medium Power Transistor (32V, 2A)
|
Rohm
|
MP6Z1 |
Medium Power Transistor (-32V, -1A)
|
Rohm
|
2SD1781K08 |
Medium Power Transistor (32V, 0.8A)
|
Rohm
|
MP6T2 |
Medium Power Transistor (−32V, −2A)
|
Rohm
|
BC869 BC869-16 BC869-25 BC869_4 BC869/T1 |
From old datasheet system PNP medium power transistor Automotive Fuse; Current Rating:20A; Voltage Rating:32V; Fuse Type:Fast Acting; Body Material:Plastic; Fuse Terminals:Blade; Length:15.41mm; Series:297; Fuse Size/Group:15.41 x 10.92 x 3.81mm
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
WPT2N40B WPT2N40-8TR |
PNP, -32V, -1A, Power Transistor with 20V N-MOSFET
|
TY Semiconductor Co., Ltd TY Semiconductor Co., L...
|
T1G4004532-FS T1G4004532-FSEVB1 |
45W, 32V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
WPT2N40-8TR |
PNP, -32V, -1A, Power Transistor with 20V N-MOSFET
|
TY Semiconductor Co., Ltd
|
CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
ACY11 ACY14 ACY17 ACY18 ACY19 AC117 AC130 AC126 AC |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-1 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 1A I(C) | TO-1 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 500MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 200MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1.2A I(C) | TO-1 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | CAN TRANSISTOR | BJT | NPN | 15V V(BR)CEO | CAN TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | TO-1 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | CAN TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 15V的五(巴西)总裁| 500mA的一(c)| TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 200MA I(C) 晶体管|晶体管|进步党| 18V的五(巴西)总裁| 200mA的我(丙
|
Electronic Theatre Controls, Inc. IDEC, Corp.
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